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Rhythm Optoelectronics, Inc.         244 Holovna Str., Chernivtsi, 58032 UkrainePhone: +380 3722  426 13, 453 10, 426 17,                              Fax:    +380 3722  426 33 rhythm@chv.ukrpack.net
 
 
 
To make the order

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 THE UFD13M PHOTODIODE

 

 

 

 

  

            

 

 

 

 

             ü       silicon four-element radial-sector p-i-n photodiode;

ü       hermetically sealed construction ruggedized;

ü       metal-to-glass package with a flat input window;

ü       minimum operating age of  5000 h;

ü       minimum quality keeping period  is 10 years;

ü        applications:  detectors of  near IR radiation

 

                     MAIN TECHNICAL CHARACTERISTICS

 

Parameter name, unit of measure

Typical value

Area of the responsive element, mm2

37

Back-biased mode of the photovoltaic detector operation. Bias voltage, Ubias,  V, not over

135

Dark current of each responsive element at Ubias=135 V, µÀ, not over

3

Guard ring dark current at Ubias=135 V,  µÀ,  not over

100

Spectral sensitivity range, µm

0.4-1.1

Current monochromatic responsivity of each responsive element (l=1.06 µ) ïðè U bias=135 V, À/W,  not less than

0.25

Capacitance of each responsive element at  Ubias=135 V, pF,  not over

14

 

 

 

 

 

 

 

 
 
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