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THE UFD15M PHOTODIODE
ÀÀNV.432231.020 ÒU
ü
four-element silicon p-i-n-photodiode
ü
radial-sector responsive elements layout;
ü
high-response speed
ü
hermetically sealed construction;
ü
metal-to- glass package with a flat detector window;
ü
ruggedized.
MAIN CHARACTERISTICS
Responsive element area diameter, mm 16
Area of the responsive element,
mm² 48.6
Element number, pcs.
4
Element spacing, mm.
0.2
Back-biased mode of photovoltaic detector operation
Dark current of the PD responsive element (Ubias = 135V, T=20°C),
µA, not over 0.8
Noise equivalent power (Ubias = 135V, T=20°C),
W/Hz1/2, not over 1· 10-12
Dark current of PD guard ring (Ubias = 135V, T=20°C),
µA, not over 100.0
Spectral sensitivity range in (10% of peak spectral response), µA
0,4 - 1,1
Current monochromatic pulse responsivity of the PD responsive element
(Ubias = 135V, λ = 1.06 µm),
A/W, not less than 0,2
Current monochromatic pulse responsivity straggling
(Ubias = 135V, λ = 1.06 µm),
% not over 5.0
Photoelectric coupling coefficient (Ubias=120V, λ = 1.06 µm), % not over
5.0
Capacitance of PD responsive element (Ubias=135V) pF,
not over
22,0
Cut off frequency (Ubias=135V) MHz, not less than
5,0
OPERATING CONDITIONS
Operating temperature range, °Ñ from minus 60 up to 85
Relative air humidity,
%, at temperature, °Ñ,
up to 98 at 40
RELIABILITY CHARACTERISTICS
Failure rate, h-1, not over5õ10-6 within 5000 h
operating age at confdence coefficient of
0,6
90 % quality keeping period – not less than 15 years.
FIELD OF APPLICATION
Detectors of light radiation in the range of 0.4 – 1.1
µm in guidance systems, scientific research.
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