THE UFD16 PHOTODIODE

ÒU U 31-044-025-2002

ü      single-element silicon p-i-n photodiode;

ü      round responsive element;

ü      low power supply value;

ü      high-response speed

ü      hermetically sealed construction;

ü      metal-to- glass package with a flat detector window;

ü      ruggedized.

 MAIN CHARACTERISTICS

Responsive element area diameter, mm                                                                10.5

Area of the responsive element, mm²                                                                    86.5

Element number, pcs.                                                                                               41

Back-biased mode of photovoltaic detector operation

Dark current of the PD responsive element (U_bias = 2V, T=20°C),

µA, not over                                                                                                              1.0

Dark current of PD guard ring (U_bias = 2V, T=20°C),

µA, not over                                                                                                              100.0

Spectral sensitivity range in (10% of peak spectral response), µA                  0,4 - 1,1

Current monochromatic pulse responsivity of the PD responsive element

(U_bias = 135V, λ = 1.06 µm), A/W, not less than                                                   0,15

Capacitance of PD responsive element (U_bias=2V) pF, not over                       300.0

OPERATING  CONDITIONS

Operating temperature range, °Ñ                                      from minus 60 up to 85

Relative air humidity,

 %, at temperature, °Ñ,                                                            up to 98 at 40

RELIABILITY CHARACTERISTICS

Failure rate, h^-1, not over5õ10^-6 within 5000 h

operating age at confdence coefficient of   0,6

95 % quality keeping period – not less than 15 years.

FIELD  OF  APPLICATION

Detectors of light radiation in the range of 0.4 – 1.1 µm in guidance systems, scientific research.