FD310m

THE FD310М PHOTODIODE

ü two-element silicon p-i-n photodiode;

ü uprated stability to ionizing radiation;

ü hermetically sealed construction;

ü metal-to-glass package with a flat input window;

ü application: detectors of near IR radiation

MAIN TECHNICAL CHARACTERISTICS

Parameter name, unit of measure	Typical value
Area of the responsive element, mm²	1.5х1.5
Zero-bias mode of photovoltaic detector operation. Dark current of each responsive element at bias voltage, U_bias= 0.01 V, nА, not over	3
Spectral sensitivity range, µm	0.4-1.1
Current monochromatic responsivity of each responsive element (λ=0.85 µm), А/W, not less than	0.3
Capacitance of each responsive element at U_bias=0.01 V, pF, not over	75