THE FD - 254 PHOTODIODE
ü silicon p-i-n photodiode;
ü high speed;
ü hermetically sealed construction, ruggedized;
ü metal-to-glass package with a flat input window;
ü detectors of pulsed near IR radiation
MAIN TECHNICAL CHARACTERISTICS
|
Parameter name, unit of measure |
Typical value |
|
Area of the responsive element, mm2 |
50.24 (ø 8) |
|
Back-biased mode of photovoltaic detector operation. Bias voltage, Ubias,V, not voltage |
27 |
|
Spectral sensitivity range, µm |
0.4-1.1 |
|
Dark current of the responsive element at Ubias =27 V, nÀ, not over |
100 |
|
Guard ring dark current at Ubias=27 V, nÀ, not over |
200 |
|
Current monochromatic responsivity (λ=0.95 µm) at Ubiaas=27 V, À/W, not less |
0.45 |
|
Capacitance at Ubias=27 V, pF, not over |
100 |
