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THE
FD-141K
PHOTODIODE
ü silicon four-element
radial-sector p-i-n
photodiode;
ü
hermetically sealed construction,
ruggedized;
ü
metal-to-glass package with a flat input window;
ü
application:
detector of pulsed near-IR
radiation
MAIN
TECHNICAL CHARACTERISTICS
Parameter name,
unit of measure |
Typical
value |
Area of
the responsive element,
mm2 |
37 |
Radius
of the responsive element,
mm |
7 |
Element
spacing,
mm |
0.2 |
Back-biased
mode of photovoltaic detector operation.
Bias voltage,
Ubias,
V,
not over |
120 |
Dark
curent of each responsive element at Ubias
=120
V,
µÀ,
not over |
7 |
Guard
ring dark current at Ubias
=120
V,
µÀ,
not over |
100 |
Spectral sensitivity range, µm |
0.4-1.1 |
Current
monochromatic
responsivity
of
each
responsive
element
(λ=1.06
µm)
at Ubias
=120
V,
À/W,
not less
than |
0.2 |
Capacitance of each responsive element at Ubias=120
V,
pF,
not over |
14 |
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