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THE FD-255 PHOTODODE
3.368.208
ÒU
ü
silicon
p-i-n
photodiode;
ü high speed;
ü
hermetically sealed
construction,
ruggedized;
ü metal-to-glass package
with a flat input window;
ü application:
detectors of near IR radiation
MAIN TECHNICAL CHARACTERISTICS
Characteristics
(parameter)
name, unit of measure |
Typcal
value |
Area of
the responsive element,
mm2 |
3.14 |
Back-biased
mode of photovoltaic detector operation.
Bias voltage, Ubias,
V,
not over |
250 |
Dark
current of the responsive element at Ubias=250
V,
nÀ,
not over |
100 |
Guard
ring dark current at Ubias=250
V,
µÀ,
not over |
100 |
Spectral sensitivity range,
µm |
0.4-1.1 |
Current
monochromatic responsivity at operating wavelength
at Ubias=250
V,
À/V,
not less |
0.4 |
Capacitance at Ubias=250
V,
pF,
not over |
2.7 |
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