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THE
FD
297
PHOTODIODE
ü two-chip silicon
p-i-n-photodiode;
ü no coupling
between detector
sensitive elements;
ü uprated
stability to ionizing radiation;
ü
hermetically sealed
construction;
ü metal-to-glass package with a flat input window;
ü
application:
detectors of near IR radiation
MAIN
TECHNICAL CHARACTERISTICS
Parameter name,
unit of measure |
Typical
value |
Area of
the responsive element,
mm2 |
1,4õ2 |
Back-biased
mode of photovoltaic detector operation.
Bias voltage, Ubias,
V,
not over |
3 |
Dark
current of each responsive element at Ubias=3
V,
nÀ,
not over |
50 |
Spectral
sensitivity range,
µm |
0.4-1.1 |
Current
monochromatic
responsivity
of
each
responsive
element
(λ=0.85
µm),
À/W,
not less than |
0.31 |
Current
total
responsivity
of
each
ersponsive
element,
mÀ/lm,
not less than |
4.8 |
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