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THE FD309 PHOTODIODE
3.368.286 ÒU
ü
single-element silicon p-i-n-photodiode;
ü
round responsive element;
ü
high responsivity;
ü
hermetically sealed construction;
ü
metal-to-glass package with a flat detector window;
ü
ruggedized.
MAIN CHARACTERISTICS
Diameter of the responsive element, mm 10,5
Area of the responsive element,
mm² 86,5
Element number, pcs
  1
Back-biased mode of photovoltaic detector operation
Dark current of the PD responsive element (Ubias = 29V, T=20°C),
µA, not 1,0
Dark currentof the PD guard ring (Ubias = 29V, T=20°C),
µA not over 30,0
Spectral sensitivity range in 10 %
level of the maximum, µA
0,4 - 1,1
Current monochromatic pulse responsivity of the PD responsive element
(Ubias = 2V, λ = 0,9 µm),
A/W, not less than 0,5
Spacing response non-uniformity
(Ubias = 27V, λ = 0,9 µm), %, not over
5,0
Rise time
(Ubias = 27V, λ = 0,9 µm, Rí=100 Ohm), ns, not over
50,0
PD capacity (Ubias=27V) pF,
not over 100,0
OPERATING  CONDITIONS
Operating temperature range, °Ñ from minus 60 up to 85
Relative air humidity,
%, at temperature, °Ñ,
up to 98 at 25
RELIABILITY CHARACTERISTICS
Failure rate, h-1, not over5õ10-6 within 5000 h
operating age at confdence coefficient of
0,6
98 % PD storage keeping period – not less than 12 years.
FIELD  OF  APPLICATION
Light radiation sensors in the range of 0.4 – 1.1
µm in guidance systems, scientific research.
 
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