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THE
UFD02 PHOTODIODE
ü
Silicon
p-i-n
photodiode;
ü non-hermetic
construction;
ü
fabric-based
–laminate
header
ü
application: scintillator –photodiode modules for X- ray
and gamma-speñtroscopy
come complete
with the UFD02 photodiode
MAIN TECHNICAL CHARACTERISTICS
Parameter name,
unit of measure |
Typical
value |
Area of
the responsive element,
mm2 |
10õ10 |
Back-biased
mode of photovoltaic detector operation.
Back bias voltage, Ubias,
V,
not over |
10 |
Dark
current at Ubias
=10
V,
nÀ,
not over |
100 |
Spectral sensitivity range, µm |
0.4-1.1 |
Current
monochromatic responsivity
(λ=0.63
µm)
at Ubias=10
V,
À/W,
not less than |
0.3 |
Capacitance at Ubias
=10V,
pF,
not over |
180 |
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