UFD03

THE UFD03 PHOTODIODE

ü Silicon p-i-n photodiode;

ü non-hermetic construction;

ü fabric-based-laminate header;

ü application: scintillator-photodiode modules for X-ray and gamma-spectroscopy come

complete with the UFD03 photodiode

MAIN TECHNICAL CHARACTERISTICS

Parameter name, unit of measure	Typical value
Area of the responsive element, mm²	10х10
Back-biased mode of the photovoltaic detector operation. Bias voltage, U_bias, V, not over	10
Dark current U_bias =10 V, nА, not over	150
Spectral sensitivity range, µm	0.4-1.1
Current monochromatic responsivity (λ=0.63 µm) at U_bias=10 V, А/W, not less than	0.3
Capacitance at U_bias =10 V, pF, not over	180