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THE
UFD13M
PHOTODIODE
ü silicon four-element radial-sector
p-i-n
photodiode;
ü
hermetically sealed
construction,
ruggedized;
ü
metal-to-glass package with a flat input window;
ü
minimum
operating age of 5000
h;
ü
minimum
quality keeping period is
10
years;
ü
applications:
detectors of near IR radiation
MAIN
TECHNICAL CHARACTERISTICS
Parameter name,
unit of measure |
Typical
value |
Area of
the responsive element,
mm2 |
37 |
Back-biased
mode of the photovoltaic detector operation.
Bias voltage,
Ubias,
V,
not over |
135 |
Dark
current of each responsive element at Ubias=135
V,
µÀ,
not over |
3 |
Guard
ring dark current at Ubias=135
V,
µÀ,
not over |
100 |
Spectral sensitivity range,
µm |
0.4-1.1 |
Current
monochromatic
responsivity
of
each
responsive
element (l=1.06
µ)
ïðè
U
bias=135
V,
À/W,
not less than |
0.25 |
Capacitance of each responsive element at Ubias=135
V,
pF,
not over |
14 |
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