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THE FD299M PHOTODIODE
ü Silicon four-element p-n
photodiode array;
ü
uprated
stability to ionizing radiation;
ü
non-hermetic
construction,
naked
chip;
ü
application; detectors of near IR radiation
MAIN TECHNICAL CHARACTERISTICS
Parameter name, unit of measure |
Typical
value |
Area of
the responsive element,
mm2 |
2х2 |
Zero-bias mode of photovoltaic detector operation.
Current total responsivity of each responsive
element at bias voltage of Ubias=
0
V,
mА/lm,
not less than |
3.6 |
Spectral sensitivity range,
µm |
0.4-1.0 |
Capacitance of each responsive element at Ubias=
0
V,
pF,
not over |
60 |
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