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THE
FD313M PHOTODIODE
ü
silicon
two-element p-n
photodiode;
ü
uprated
stability to ionizing
radiation;
ü
non-hermetic construction;
ü glass
ceramic substrate;
ü application:
detectors of near IR radiation
MAIN TECHNICAL CHARACTERISTICS
Parameter name,
unit of measure |
Typical
value |
Area of
the responsive element,
mm2 |
1.35х2.0 |
Zero-bias
mode
of
photovoltaic
detector
operation.
Current total responsivity of each responsive
element at bias voltage
Ubias=
0 V, mA/lm, not less than |
5 |
Spectral sensitivity range,
µm |
0.4-1.0 |
Current
monochomatic
responsivity
of
each
responsive
element
(λ=0.85
µm),
А/W,
not less than |
0.35 |
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