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THE
QUANT PHOTODIODE
ü
Silicon
p-n
photodiode;
ü
high
responsivity and stability in UV region of the
spectrum;
ü
hermetically sealed construction;
ü metal-to-glass package with
a quartz
(leuco sapphire)
input window;
ü application:
metrology, spectrophotometry, detectors
of UV radiation
MAIN TECHNICAL CHARACTERISTICS
Parameter name,
unit of measure |
Typical
value |
Area
of
the
responsive
element
(a
circle),
mm2 |
100 |
Zero-bias
mode
of
photovoltaic
detector
operation.
Dark current at bias voltage
Ubias=10
mV,
nÀ,
not over |
3 |
Spectral sensitivity range, µm |
0.2-1.1 |
Current
monochromatic responsivity,
À/W,
not less than:
l=0.25
µm
l=0.55
µm |
0.08
0.3 |
Spacing
response non-uniformity,
%,
not
over |
5 |
Radiant-flux
characteristic
nonlinearity
within
the
limits
of
5
orders
of
magnitude,
%,
not
less than |
5 |
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